utc MMBTA13 npn epitaxial silicon transistor utc unisonic technologies co., ltd. 1 qw-r206-006,b darlington transistor description the utc MMBTA13 is a darlington transistor. features *collector-emitter voltage: v ces = 30v *collector dissipation: pc (mas) = 350 mw marking sot-23 1 2 3 1: emitter 2: base 3: collector absolute maximum ratings (ta=25 c) parameter symbol value unit collector-base voltage v cbo 30 v collector-emitter voltage v ces 30 v emitter-base voltage v ebo 10 v collector dissipation pc 350 mw collector current ic 500 ma junction temperature t j 150 c storage temperature t stg -55 ~ +150 c electrical characteristics (ta=25 c, unless otherwise specified) parameter symbol test conditions min max unit collector-emitter breakdown voltage bv ces ic=100 a,i b =0 30 v collector cut-off current i cbo v cb =30v,i e =0 100 na emitter cut-off current i ebo v eb =10v,ic=0 100 na dc current gain h fe v ce =5v,ic=100ma 10000 collector-emitter saturation voltage v ce (sat) ic=100ma,i b =0.1ma 1.5 v base-emitter on voltage v be (on) v ce =5v,ic=100ma 2.0 v current gain bandwidth product f t v ce =5v,ic=10ma, f=100mhz 125 mhz pulse test: pulse width<300 s, duty cycle=2% 1m
utc MMBTA13 npn epitaxial silicon transistor utc unisonic technologies co., ltd. 2 qw-r206-006,b typical characteristics i(tot) ma 0.1 10 100k current gain & collector current 1 100 1000 10k collector current (ma) 1000k hfe hfe@v ce =5v i(tot) ma 0.1 10 1000 on voltage & collector current 1 100 1000 100 collector current (ma) 10000 on voltage (mv) v be (on)@v ce =5v i(tot) ma 10 100 cutoff frequency & collector current 1 100 1000 10 collector current (ma) 1000 cutoff frequency (mhz) v ce =5v i(tot) ma 10 1000 saturation voltage & collector current 1100 1000 100 collector current (ma) 10000 saturation voltage (mv) v be (sat)@ic=100i b v ce (sat)@ic=100i b i(tot) ma 10 capacitance & reverse-biased voltage 1 100 1 reverse-biased voltage(v) 10 capacitance (pf) cob i(tot) ma 10 safe operating area 1 100 1 forward voltage-v ce (v) 10 collector current -ic (ma) p t =100ms 1000 100 p t =1s p t =1ms
utc MMBTA13 npn epitaxial silicon transistor utc unisonic technologies co., ltd. 3 qw-r206-006,b i(tot) ma 25 power-dissipation vs ambient temperature 050 0 pd-power dissipation(w) 100 75 125 150 0.25 0.5 0.75 1 temperature ( ) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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